FAU - Industrial Services in Crystal Growth of SiC
FAU - Industrial Services in Crystal Growth of SiC

Overview

The Crystal Growth Lab at the Materials Department 6 (University of Erlangen-Nürnberg) offers in conjunction with the University Knowledge and Technology Transfer Office services for industrial partners in the field of high temperature crystal growth & technology.

R & D contracts
growth machine design & prototyping
process development
support / consulting of industrial crystallization
training of industrial staff

In particular, high temperature crystal growth and epitaxy of wide band-gap semiconductors like silicon carbide and related materials belong to the key competences.

Contact: crystals@fau.de

Lab information: Prof. Dr.-Ing. Peter Wellmann, Crystal Growth Lab, Materials Department 6, Friedrich-Alexander-Universität Erlangen-Nürnberg, Dr.-Mack-Str. 77, 90763 Fürth, Germany
Equipment (complete processing chain to prepare SiC wafers from SiC source materials):

5 x PVT reactors (physical vapor transport growth of SiC boules, T = 1600 °C ... 2500 °C)
1 x AIXTRON CVD reactor (chemical vapor deposition of SiC on Si)
various ovens for crystal annealing / heat treatment
1 x grinding machine (preparation of boule cylinders and flats)
1 x multi-wire-saw
3 x polishing machines
various optical, electrical and spectroscopic characterization equipment for semiconductor wafer material inspection (for more details please see "services")

. OVERVIEW

R & D contracts
growth machine design & prototyping
process development
support / consulting of industrial crystallization
training of industrial staff

in DETAIL

MACHINE TECHNOLOGY

design & prototyping of industrial growth furnaces

4 inch & 6 inch

process automation

in-situ growth monitoring tools

2D/3D low dose x-ray visualization

PROCESSING

bulk single crystal SiC growth

4H-/6H-SiC  (3 inch, 4 inch, 6 inch in development)
15R-/3C-SiC (small pieces)

R & D contracts on SiC crystal growth

SiC seed development
doping (Al, B, N, P)
anything special / non-standard

SiC powder synthesis & test

validation for PVT bulk growth

3C-SiC epitaxy on Si

high temperature crystal growth

melt temperature up to 2700°C

thin films from PVD processing and

nano-particulate ink deposition

MATERIALS TESTING

electrical

resistance measurements  
Hall mobility & charge carrier density

…. Yes. service.